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PC3H4/PC3Q64Q
PC3H4/PC3Q64Q
s Features
1. AC input type 2. Half pitch type (lead pitch : 1.27mm) 3. Isolation voltage between input and output (Viso: 2 500Vrms) 4. Applicable to infrared ray reflow (230C, for MAX. 30s) 5. High reliability 6. Taping package PC3H4 (1ch), PC3Q64Q (4ch) 7. Recognized by UL, file No. E64380 Approved by VDE, No.5922UG
Mini-falt Package AC Input Type Half Pitch Photocoupler
s Outline Dimensions
PC3H4 2.60.3
1
(Unit : mm)
Anode mark
S 3H4
4.40.2 5.30.3 (1.7)
4
2
3
1.270.25
0.05
7.0+0.2 -0.7
+0.4 0.5-0.2
0.10.1
1 2 3 4
2.00.2 Parting line Internal connection diagram
4 3
s Applications
1. Programmable controllers
g ( ) : Reference dimensions
s Package Specifications
Model No. PC3H4 PC3Q64Q Taping specifications Taping reel diameter 330mm (3 000pcs.) Taping reel diameter 330mm (1 000pcs.)
PC3Q64Q
0.2
1
2
s Absolute Maximum Ratings
Input
(Ta=25C) Symbol Unit Parameter Rating IF mA Forward current 50 *1Peak forward current A 1 IFM mW 70 P Power dissipation Collector-emitter PC3H4 V 70 VCEO voltage 35 V PC3Q64Q VCEO V 6 Emitter-collector voltage VECO mA 50 Collector current IC mW 150 Collector power dissipation PC mW 170 Total power dissipation Ptot *2Isolation voltage kVrms 2.5 Viso C Operating temperature Topr -30 to +100 C Storage temperature Tstg -40 to +125 *3Soldering temperature C 260 Tsol
0.2mm or more
10.30.3
16
1.270.25
9
Model No.
Output
0.40.1
1
Epoxy resin
8
C0.4 0.20.05
4.40.2
Primary Side mark
0.40.1 Epoxy resin Anode Cathode Emitter Collector 5.30.3
0.10.1 2.60.2
+0.4 0.5-0.2
6 Internal connection diagram
+0.2 7.0-0.7
*1 Pulse width<=100s, Duty ratio : 0.001 *2 AC for 1min, 40 to 60%RH, f=60Hz *3 For 10s
16
15
14
13
12
11
10
9
1357
Anode/Cathode
2468
Anode/Cathode
9 11 13 15
Emitter
10 12 14 16 1 2 3 4 5 6 7 8
Collector
Soldering area
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
PC3H4/PC3Q64Q s Electro-optical Characteristics
Input Parameter Forward voltage Terminal capacitance Collector dark current Output Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Isolation resistance Floating capacitance Response time Rise time Fall time PC3H4 PC3Q64Q PC3H4 PC3Q64Q Symbol VF Ct ICEO ICEO BVCEO BVCEO BVECO IC VCE(sat) RISO Cf tr tf Conditions IF=20mA V=0, f=1kHz VCE=50V, IF=0 VCE=20V, IF=0 IC=0.1mA, IF=0 IC=0.1mA, IF=0 IE=10A, IF=0 IF=1mA VCE=5V IF=20mA IC=1mA DC500V 40 to 60%RH V=0, f=1MHz VCE=2V IC=2mA RL=100 MIN. - - - - 70 35 6 0.2 - 5x1010 - - - TYP. 1.2 30 - - - - - - 0.1 1x1011 0.6 4 3 MAX. 1.4 250 100 100 - - - 4.0 0.2 - 1.0 18 18 (Ta=25C) Unit V pF nA nA V V V mA V pF s s
Transfer characteristics
Fig.1 Forward Current vs. Ambient Temperature
60
Fig.2 Diode Power Dissipation vs. Ambient Temperature
Diode power dissipation P (mW)
50 Forward current IF (mA)
100
40
80 70 60
30
20
40
10 0 -30
20 0 -30
0
25
50 55
75
100
125
0
50 55
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
PC3H4/PC3Q64Q Fig.3 Collector Power Dissipation vs. Ambient Temperature
200 Collector power dissipation PC (mW) 250 150 Power dissipation Ptot (mW) 200 170 150 100 50 0 -30 0 -30
Fig.4 Total Power Dissipation vs. Ambient Temperature
100
50
0
25
50
75
100
125
0
25
50
75
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig.5 Peak Forward Current vs. Duty Ratio
10000 5000 Peak forward current IFM (mA) 2000 1000 500 200 100 50 20 10 5
5 10-3 2 5 10-2 2 5 10-1 2 5
Fig.6 Forward Current vs. Forward Voltage
500 200
Pulse width<=100s Ta=25C
Ta=75C
50C 25C 0C
Forward current IF (mA)
100 50 20 10 5 2 1
-25C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Duty ratio
Forward voltage VF (V)
Fig.7 Current Transfer Ratio vs. Forward Current
500 VCE=5V Ta=25C Current transfer ratio CTR (%) 400
Fig.8 Collector Current vs. Collector-emitter Voltage
PC (MAX.) 50 Ta=25C
Collector current IC (mA)
40
IF=30mA 20mA 10mA
300
30
200
20 5mA 10 0 1mA 0 2 4 6 8 10 Collector-emitter voltage VCE (V)
100
0 0.1
1
10
100
Forward current IF (mA)
PC3H4/PC3Q64Q Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature
150 IF=1mA VCE=5V Collector-emitter saturation voltage VCE (sat) (V)
Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 IF=20mA IC=1mA
Relative current transfer ratio (%)
100
50
0 -30
0
20
40
60
80
100
0.00 -30
0
20
40
60
80
100
Ambient temperature Ta (C)
Ambient temperaturet Ta (C)
Fig.11 Collector Dark Current vs. Ambient Temperature
10-5
5
Fig.12 Response Time vs. Load Resistance
1000 500 200 100 Response time (s) 50 20 10 5 td 2 1 0.5 0.2 0.1 0.01 ts tr tf VCE=2V IC=2mA Ta=25C
VCE=20V
Collector dark current ICEO (A)
10-6
5
10-7
5
10-8
5
10-9
5
10-10
5
10-11 -30
0
20
40
60
80
100
0.1
1
10
100
Ambient temperature Ta (C)
Load resistance RL (k)
Fig.13 Test Circuit For Response Time
VCC
Fig.14 Collector-emitter Saturation Voltage vs. Forward Current
10 Collector-emitter saturation voltage VCE (sat) (V) Ta=25C IC=0.5mA 1mA 3mA 6 5mA 4 7mA
RD Input
RL
Output Input Output 10% 90%
8
td tr
ts tf
2 0 0 2 4 6 8 10 Forward current IF (mA)
PC3H4/PC3Q64Q Fig.5 Reflow Soldering
Only one time soldering is recommended within the temperature profile shown below. 230C
200C
180C
25C 30s 1min 2min 1.5min 1min
s Precautions for Use
Please refer to the chapter "Precautions for Use".

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